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Profil
| Derzeitige Stellung | Professor W-2 und Äquivalente |
|---|---|
| Fachgebiet | Werkstofftechnik,Elektronische Halbleiter, Bauelemente und Schaltungen, Integrierte Systeme, Sensorik, Theoretische Elektrotechnik,Theoretische Physik der Kondensierten Materie |
| Keywords | Semiconductor materials and devices, Process simulations, Ab-initio and multiscale modeling, Nanostructured interfaces, Simulation-assisted nanoscale characterization |
Aktuelle Kontaktadresse
| Land | USA |
|---|---|
| Ort | Columbus |
| Universität/Institution | Ohio State University |
| Institut/Abteilung | Department of Materials Science and Engineering |
Gastgeber*innen während der Förderung
| Prof. Dr. Heiner Ryssel | Bereich Bauelementetechnologie, Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB), Erlangen |
|---|---|
| Beginn der ersten Förderung | 01.05.2006 |
Programm(e)
| 2006 | Fraunhofer-Bessel-Forschungspreis-Programm |
|---|
Projektbeschreibung der*des Nominierenden
| Future semiconductor devices will be so small that their structure needs to be known and controlled atom by atom. Professor Windl is one of the pioneers in the implementation and application of atomic-level simulation methods to semiconductor research, materials science, and in the semiconductor industry. The goal of his cooperation with the Fraunhofer Institute of Integrated Systems and Device Technology is to apply such techniques to the computational design of future generations of semiconductor devices. |